- 姓名: 宁圃奇
- 性别: 男
- 职称: 研究员
- 职务:
- 学历: 博研
- 电话: 010-82547078-603
- 传真: 010-82547137
- 电子邮件: npq@mail.iee.ac.cn
- 所属部门: 高功率密度电气驱动及电动汽车技术研究部,中国科学院电工研究所
- 通讯地址: 北京市海淀区中关村北2街6号
2004年毕业于清华大学电机系获工学学士,2006年毕业于清华大学电机系获工学硕士学位,2010年获美国弗吉尼亚理工大学电气与计算机工程系工学博士学位。2010-2013年工作于美国橡树岭国家实验室,任副研究员。2013年加入中国科学院电工研究所,任研究员。
简 历:
社会任职:
1)宽禁带半导体前沿探索;
2)功率模块封装新技术;
3)高功率密度变频器
研究方向:
承担科研项目情况:
[1]P. Ning, F. Wang, and K. D. T. Ngo, "Forced-Air Cooling System Design Under Weight Constraint for High-Temperature SiC Converter," IEEE Trans. on Power Electronics, Vol.29,issue 4, pp.1998-2007, April,2014
[2]P. Ning, Di Zhang, Rixin Lai, Dong Jiang, Fred Wang, Dushan Boroyevich, Rolando Burgos, Kamiar Karimi, Vikram Immanue, and Eugene Solodovnik, " Development of a 10 kW High Temperature, High Power Density Three-Phase AC-DC-AC SiC Converter," IEEE Industrial Electronics Magazine, Vol. 7, issue 1,pp. 6-17, March, 2013
[3]P. Ning, F. Wang, and K. Ngo, "Automatic Layout Design for Power Module," IEEE Trans. on Power Electronic, Vol. 28, issue 1, pp. 481-487, Jan, 2013.
[4]P. Ning, F. Wang, and K. Ngo, "High Temperature SiC Power Module Electrical Evaluation Procedure," IEEE Trans. on Power Electronics, Vol. 26, issue 11, pp. 3079-3083, Nov, 2011.
[5]P. Ning, G. Lei, F. Wang, G. Lu, K. Ngo, and K. Rajashekara, "A Novel High-Temperature Planar Package for SiC Multichip Phase-Leg Power Module", IEEE Trans. on Power Electronics, Vol.25, issue 8, pp. 2059 – 2067, Aug, 2010.
[6]P. Ning, R. Lai, D. Huff, F. Wang, K. Ngo, K. Karimi, and V. Immanuel, "SiC Wirebond Multi-Chip Phase-Leg Module Packaging Design and Testing for Harsh Environment," IEEE Trans. on Power Electronics, Vol. 25, issue 1, pp. 16-23, Jan, 2010.
